Iingenelo zesandla seDiode Laser ezingama-808
* Ikhuselekile kwi-Onke-Ulusu
I-laser ye-diode ene-high-power 4-waves diode (808nm+755nm+940nm+1064nm)
* Ubungakanani beendawo ezininzi, Akukho zi-Angles ezifileyo
Ukususa iinwele zomzimba wonke kunye nobuso nge-360°.
* Amandla aphezulu kunye nexesha elide lokuphila
Ibha yelaser ehambelanayo, Amandla amakhulu angama-600W-2400W. Iishothi ezingama-50 ezigidi ziqinisekisiwe.
Iingenelo zokususa iTattoo kwiPicosecond
* Ukususwa kweTattoo ngemibala yonke
Itekhnoloji yelaser ye-picosecond ene-wavelength ezi-3 (532nm+1064nm+1320nm)
* Ukhuseleko oluphindwe kabini olungenangozi
Uyilo olutsha lweSwitshi eNqanda iiNgozi. Ikhuselekile kwaye ikhuselekile.
*Ukupholisa kwangoko, Unyango oluqinisekileyo
Inkqubo yokupholisa eyakhelwe ngaphakathi ekhethekileyo iqinisekisa intuthuzelo kwaye ikhusela ulusu.
| IINKCUKACHA | ||
| UHLOBO LWELASER | Ilaser yediode | I-Pico laser |
| I-WAVELENGTH | 808nm+1064nm+755nm+940nm | 532nm+1064nm+1320nm |
| AMANDLA ELASER | 600W~2400W | 1000W |
| UBUDE BEXESHA LOKUPHUMA KWEMPILO | 1~120J/CM² | 1~2000MJ |
| Ubungakanani bebala | Φ6mm 12*12mm 12*24mm 12*36mm | 1~8MM |
| UQHELEKO | 1~10HZ | 1~10HZ |
| Iibhari/isibane seLaser | IiBhari zeLaser eziHlangeneyo zaseMelika | Isibane seXenon sase-UK |
| UKUPHOLISA | Ikristale yeSapphire+Umoya+Amanzi+I-Semiconductor+TEC | |
| DISPL AY | Isikrini se-intshi eziyi-15.6 | |
| QHUBEKA USEBENZA | Iiyure ezingama-24 ngaphandle kokuma | |
| IVOTAGE NOKUQHELEKA | 110-220v±10%; 50-60hz±10% | |
| Ubungakanani bephakheji | 63*56*123 CM | |
| Ubunzima | 63 KGS | |
Inkonzo egqwesileyo yabathengi kunye nokwaneliseka yeyona nto iphambili kwinkampani yethu.
I-GGLT iyazingca ngendlela yethu yokwenza izixhobo ezahlukeneyo ze-laser, nto leyo ekuvumela ukuba ufumane iziphumo ezilungileyo.